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| BFY420 HiRel NPN Silicon RF Transistor * * * * * * * HiRel Discrete and Microwave Semiconductor For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.1 dB at 1.8 GHz Outstanding Gms = 21dB at 1.8 GHz Hermetically sealed microwave package Transition Frequency fT = 22 GHz SIEGET 25-Line Infineon Technologies Grounded Emitter Transistor25 GHz fT-Line Space Qualified ESA/SCC Detail Spec. No.: 5611/008 Type Variant No. 02 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFY420 (ql) (ql) Quality Level: Marking Ordering Code see below Pin Configuration 1 C 2 E 3 B 4 E Micro-X Package 4 3 1 2 P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62702F1662 on request on request Q62702F1709 (see order instructions for ordering example) Semiconductor Group 1 of 5 Draft B, September 99 BFY420 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, 1), 2) TS 129C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-soldering point 2) Rth JS < 285 K/W Symbol VCEO VCBO VEBO IC IB Ptot Tj Top Tstg Values 4.5 15 1.5 35 3.0 160 175 -65...+175 -65...+175 Unit V V V mA mA mW C C C Notes.: 1) At TS = + 129 C. For TS > + 129 C derating is required. 2) TS is measured on the collector lead at the soldering point to the pcb. Electrical Characteristics at TA=25C; unless otherwise specified Parameter DC Characteristics Collector-base cutoff current VCB = 5 V, IE = 0 Collector-emitter cutoff current 1.) VCE = 4.5 V, IB = 1.0A Emitter-base cuttoff current VEB = 1.5 V, IC = 0 DC current gain IC = 5 mA, VCE = 1 V Notes: 1.) This Test assures V(BR)CE0 > 4.5V hFE 50 90 150 IEBO ICEX 200 (t.b.d.) 20 A A ICBO 30 nA Symbol min. Values typ. max. Unit Semiconductor Group 2 of 5 Draft B, September 99 BFY420 Electrical Characteristics (continued) Parameter AC Characteristics Transition frequency IC = 30mA, VCE = 3 V, f = 2.0 GHz Collector-base capacitance VCB = 2 V, VBE = vbe = 0, f = 1 MHz Collector-emitter capacitance VCE = 2 V, VBE = vbe = 0, f = 1 MHz Emitter-base capacitance VEB = 0.5V, VCB = vcb = 0, f = 1 MHz Noise Figure IC = 5 mA, VCE = 2 V, f = 1.8 GHz, ZS = Zsopt Insertion power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZL = 50 Power gain IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt 1dB Compression point IC = 20 mA, VCE = 2 V, f = 1.8 GHz ZS = ZSopt , ZL = ZLopt Notes.: P-1dB 12 dBm Gms 1.) Symbol min. fT 20 CCB CCE CEB F - Values typ. max. Unit GHz 22 0.14 0.46 0.67 1.1 0.9 0.85 3.0 1.7 pF pF pF dB |S21e| 2 14 18 - dB - 21 - dB 1) Gms = S 21 S12 Semiconductor Group 3 of 5 Draft B, September 99 BFY420 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level. Ordering Form: Ordering Code: Q.......... BFY420 (ql) (ql): Quality Level Ordering Example: Ordering Code: Q62702F1709 BFY420 ES For BFY420 in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: ++89 234 24480 ++89 234 28438 martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 4 of 5 Draft B, September 99 BFY420 Micro-X Package 4 Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). 3 1 2 Semiconductor Group 5 of 5 Draft B, September 99 |
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